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| e PTB 20157 20 Watts, 1.35-1.85 GHz RF Power Transistor Description The 20157 is an NPN common base RF power transistor intended for 22-26 Vdc class C operation from 1.35 to 1.85 GHz. Rated at 20 watts minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard. 20 Watts, 1.35-1.85 GHz Class C Characteristics 40% Min Collector Efficiency at 20 Watts Gold Metallization Silicon Nitride Passivated Typical Output Power vs. Input Power 30 Output Power (Watts) 25 20 15 10 5 0 0 1 2 3 4 5 6 7 2015 7 LOT COD E VCC = 22 V f = 1.85 GHz Input Power (Watts) Package 20209 Maximum Ratings Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage (collector open) Collector Current (continuous) Total Device Dissipation at Tflange = 25C Above 25C derate by Storage Temperature Range Thermal Resistance (Tflange = 70C) TSTG RJC Symbol VCER VCBO VEBO IC PD Value 50 50 4 6 75 0.43 -40 to +150 2.33 Unit Vdc Vdc Vdc Adc Watts W/C C C/W 1 9/28/98 PTB 20157 Electrical Characteristics Characteristic Breakdown Voltage C to E Breakdown Voltage C to E Breakdown Voltage E to B DC Current Gain (100% Tested) e Conditions IC = 50 mA, RBE = 27 VBE = 0 V, IC = 50 mA IC = 0 A, IE = 5 mA VCE = 5 V, IC = 500 mA Symbol V(BR)CER V(BR)CES V(BR)EBO hFE Min 50 50 4 20 Typ -- -- 5 50 Max -- -- -- 120 Units Volts Volts Volts -- RF Specifications (100% Tested) Characteristic Gain (VCC = 22 Vdc, Pout = 20 W, f = 1.85 GHz) Collector Efficiency (VCC = 22 Vdc, Pout = 20 W, f = 1.85 GHz) Load Mismatch Tolerance (VCC = 22 Vdc, Pout = 20 W, f = 1.85 GHz --all phase angles at frequency of test) Symbol Gpe C Min 6 40 -- Typ 7 43 -- Max -- -- 10:1 Units dB % -- Impedance Data (data shown for fixed-tuned broadband circuit) (VCC = 22 Vdc, Pout = 20 W) Z Source Z Load Frequency GHz 1.350 1.400 1.450 1.500 1.550 1.600 1.650 1.700 1.750 1.800 1.850 R 8.2 7.7 7.4 7.3 7.2 7.3 7.4 7.6 7.9 8.1 8.4 Z Source jX -15.0 -13.0 -12.0 -11.0 -10.0 -9.2 -8.6 -8.1 -7.8 -7.6 -7.5 2 R 9.3 8.8 8.3 7.9 7.5 7.2 6.9 6.6 6.4 6.2 6.1 Z Load jX -15 -15 -14 -14 -13 -13 -13 -12 -12 -11 -11 e Typical Performance Gain & Return Loss vs. Frequency 10 8 6 PTB 20157 Gain & Efficiency vs. Power Out 10 5 0 -5 8 6 40 30 20 50 (as measured in a broadband circuit) VCC = 22 V Pout = 20 W Return Loss (dB) Gain (dB) 4 2 0 1.3 1.4 1.5 1.6 1.7 1.8 1.9 -15 -20 -25 -30 Gain (dB) -10 4 2 0 0 5 10 15 20 25 30 VCC = 22 V f = 1.85 GHz 10 0 Frequency (GHz) Output Power (Watts) Ericsson Components RF Power Products 675 Jarvis Drive Morgan Hill, CA 95037 USA Telephone: 408-778-9434 1-877-GOLDMOS (1-877-465-3667) e-mail: rfpower@ericsson.com www.ericsson.com/rfpower Specifications subject to change without notice. LF (c) 1996 Ericsson Inc. EUS/KR 1301-PTB 20157 Uen Rev. D 09-28-98 3 Efficiency (%) |
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